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hexfet ? power mosfet IRF5806PBF absolute maximum ratings www.irf.com 1 thermal resistance parameter max. units v ds drain-source voltage -20 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -4.0 i d @ t a = 70c continuous drain current, v gs @ -4.5v -3.3 a i dm pulsed drain current -16.5 p d @t a = 25c maximum power dissipation 2.0 w p d @t a = 70c maximum power dissipation 1.3 w linear derating factor 0. 02 w/c v gs gate-to-source voltage 20 v t j , t stg junction and storage temperature range -55 to + 150 c description v dss r ds(on) max i d -20v 86m ? @v gs = -4.5v - 4.0a 147m ? @v gs = -2.5v - 3.0a parameter max. units r ja maximum junction-to-ambient 62.5 c/w tsop-6 top view 1 2 d g a d d d s 3 4 5 6 ultra low on-resistance p-channel mosfet surface mount available in tape & reel low gate charge lead-free halogen-free these p-channel mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. the tsop-6 package with its customized leadframe produces a hexfet power mosfet with r ds(on) 60% less than a similar size sot-23. this package is ideal for applications where printed circuit board space is at a premium. it's unique thermal design and r ds(on) reduction enables a current-handling increase of nearly 300% compared to the sot-23.

2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -2.0a, v gs = 0v t rr reverse recovery time ??? 116 174 ns t j = 25c, i f = -2.0a q rr reverse recovery charge ??? 90 135 nc di/dt = -100a/s source-drain ratings and characteristics -16.5 -2.0 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.011 ??? v/c reference to 25c, i d = -1ma ??? 47.1 86 v gs = -4.5v, i d = -4.0a 67.5 147 v gs = -2.5v, i d = -3.0a v gs(th) gate threshold voltage -0.45 ??? -1.2 v v ds = v gs , i d = -250a g fs forward transconductance 6.4 ??? ??? s v ds = -10v, i d = -4.0a ??? ??? -15 v ds = -16v, v gs = 0v ??? ??? -25 v ds = -16v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -12v gate-to-source reverse leakage ??? ??? 100 v gs = 12v q g total gate charge ??? 8.3 11.4 i d = -4.0a q gs gate-to-source charge ??? 1.2 ??? nc v ds = -16v q gd gate-to-drain ("miller") charge ??? 2.6 ??? v gs = -4.5v t d(on) turn-on delay time ??? 6.2 9.3 v dd = -10v, v gs = -4.5v t r rise time ??? 27 41 i d = -1.0a t d(off) turn-off delay time ??? 94 140 r g = 6.0 ? t f fall time ??? 126 190 r d = 10 ? c iss input capacitance ??? 594 ??? v gs = 0v c oss output capacitance ??? 114 ??? pf v ds = -15v c rss reverse transfer capacitance ??? 87 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified)
m ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. pulse width 300s duty cycle when mounted on 1 inch square copper board, 10sec s d g
www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -4.0a 1 10 100 1.0 1.5 2.0 2.5 3.0 v = -15v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -7.5v -5.0v -4.5v -3.5v -3.0v -2.7v -2.0v -1.5v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.50v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -7.5v -5.0v -4.5v -3.5v -3.0v -2.7v -2.0v -1.5v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.50v
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -4.0a v = -16v ds 0.1 1 10 100 0.2 0.6 1.0 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 0 200 400 600 800 1000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) -i , drain current (a) c d
1 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 10a. switching time test circuit 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 -v gs, gate -to -source voltage (v) 0.00 0.05 0.10 0.15 0.20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -4.0a d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 0 5 10 15 20 -i d , drain current ( a ) 0.00 0.04 0.08 0.12 0.16 0.20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) vgs = -4.5v vgs = -2.5v
www.irf.com 7 fig 15. typical vgs(th) vs. junction temperature typical power vs. time -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - v g s ( t h ) ( v ) i d = -250a 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 time (sec) 0 20 40 60 80 100 p o w e r ( w )
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" note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/2010

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